Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm

被引：12

作者：

Ye, Hong ^{[1
]}

Song, Yuxin ^{[1
]}

Gu, Yi ^{[2
]}

Wang, Shumin ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

AIP ADVANCES | 2012年 / 2卷 / 04期

关键词：

MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; SURFACTANT; BISMUTH; GROWTH; GAAS1-XBIX; LASERS;

D O I：

10.1063/1.4769102

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 mu m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 degrees C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4769102]

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