Field Emission Properties of Gold Nanoparticle-Decorated ZnO Nanopillars

被引：57

作者：

Chang, Yuan-Ming ^{[1
]}

Lin, Man-Ling ^{[1
]}

Lai, Tung-Yen ^{[2
]}

Lee, Hsin-Yi ^{[2
,3
]}

Lin, Chih-Ming ^{[4
]}

Wu, Yew-Chung Sermon ^{[2
]}

Juang, Jenh-Yih ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

[4] Natl Hsinchu Univ Educ, Dept Appl Sci, Hsinchu 300, Taiwan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2012年 / 4卷 / 12期

关键词：

ZnO nanopillars; vapor transport deposition; Au nanoparticles; field emission; turn-on field; current density; NANOROD ARRAYS; OPTOELECTRONIC PROPERTIES; GROWTH-MECHANISM; PHOTOLUMINESCENCE; NANOSTRUCTURES; PERFORMANCE; NANOWIRES; FABRICATION; BEHAVIOR; FILMS;

D O I：

10.1021/am301848a

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structural and optoelectronic properties of ZnO nanopillars (ZnO-NPs) grown on Si substrates by the vapor transport deposition method were investigated. In particular, by varying the deposition duration and hence the morphology of the vertically aligned ZnO-NPs, the resultant field emission characteristics were systematically compared. In addition to identifying the advantageous field emission properties exhibited in the pencil-like ZnO-NPs, we observed that by adhering Au nanoparticles on the surface of the ZnO-NPs the turn-on field and the maximum current density can be drastically improved from 3.15 V/mu m and 0.44 mA/cm(2) at 5 V/mu m for the best ZnO-NPs to 2.65 V/mu m and 2.11 mA/cm(2) at 5 V/mu m for Au/ZnO-NPs, respectively. The enhancement of field emission characteristics that resulted from Au-nanoparticle decoration is discussed on the basis of charge-transfer-induced band structure modifications.

引用

页码：6675 / 6681

页数：7

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