Iron-assisted ion beam patterning of Si(001) in the crystalline regime

被引:23
作者
Macko, Sven [1 ]
Grenzer, Joerg [2 ]
Frost, Frank [3 ]
Engler, Martin [1 ]
Hirsch, Dietmar [3 ]
Fritzsche, Monika [2 ]
Muecklich, Arndt [2 ]
Michely, Thomas [1 ]
机构
[1] Univ Cologne, Inst Phys 2, D-50937 Cologne, Germany
[2] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[3] Leibniz Inst Oberflachenmodifizierung eV, D-04318 Leipzig, Germany
关键词
FABRICATION; ARRAYS; CONES;
D O I
10.1088/1367-2630/14/7/073003
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present ion beam erosion experiments on Si(001) with simultaneous sputter co-deposition of steel at 660 K. At this temperature, the sample remains within the crystalline regime during ion exposure and pattern formation takes place by phase separation of Si and iron-silicide. After an ion fluence of F approximate to 5.9 x 10(21) ions m(-2), investigations by atomic force microscopy and scanning electron microscopy identify sponge, segmented wall and pillar patterns with high aspect ratios and heights of up to 200 nm. Grazing incidence x-ray diffraction and transmission electron microscopy reveal the structures to be composed of polycrystalline iron-silicide. The observed pattern formation is compared to that in the range of 140-440K under otherwise identical conditions, where a thin amorphous layer forms due to ion bombardment.
引用
收藏
页数:16
相关论文
共 29 条
[1]  
Askeland D, 1996, 1996 MATERIALWISSENS
[2]  
B Predel, 1995, FE SI IRON SILICON S
[3]   Tunable reflection minima of nanostructured antireflective surfaces [J].
Boden, S. A. ;
Bagnall, D. M. .
APPLIED PHYSICS LETTERS, 2008, 93 (13)
[4]   Bioactive silicon structure fabrication through nanoetching techniques [J].
Canham, LT .
ADVANCED MATERIALS, 1995, 7 (12) :1033-+
[5]   Self-organized patterning on Si(001) by ion sputtering with simultaneous metal incorporation [J].
Cornejo, Marina ;
Ziberi, Bashkim ;
Meinecke, Christoph ;
Hirsch, Dietmar ;
Gerlach, Juergen W. ;
Hoeche, Thomas ;
Frost, Frank ;
Rauschenbach, Bernd .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 102 (03) :593-599
[6]   GEOMETRY AND STRUCTURE OF SPUTTER-INDUCED CONES ON NICKEL-SEEDED SILICON [J].
FUJIMOTO, Y ;
NOZU, M ;
OKUYAMA, F .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) :2725-2734
[7]   Imprinted Moth-Eye Antireflection Patterns on Glass Substrate [J].
Hong, Sung-Hoon ;
Bae, Byeong-Ju ;
Han, Kang-Soo ;
Hong, Eun-Ju ;
Lee, Heon ;
Choi, Kyung-Woo .
ELECTRONIC MATERIALS LETTERS, 2009, 5 (01) :39-42
[8]   A porous silicon-based optical interferometric biosensor [J].
Lin, VSY ;
Motesharei, K ;
Dancil, KPS ;
Sailor, MJ ;
Ghadiri, MR .
SCIENCE, 1997, 278 (5339) :840-843
[9]   Phenomenology of iron-assisted ion beam pattern formation on Si(001) [J].
Macko, Sven ;
Frost, Frank ;
Engler, Martin ;
Hirsch, Dietmar ;
Hoeche, Thomas ;
Grenzer, Joerg ;
Michely, Thomas .
NEW JOURNAL OF PHYSICS, 2011, 13
[10]   Is keV ion-induced pattern formation on Si(001) caused by metal impurities? [J].
Macko, Sven ;
Frost, Frank ;
Ziberi, Bashkim ;
Foerster, Daniel F. ;
Michely, Thomas .
NANOTECHNOLOGY, 2010, 21 (08)