Fabrication of highly (111)-oriented Cu2O films on glass substrates by repeated chemical bath deposition

被引:3
作者
Tonagi, Daichi [1 ]
Hagiwara, Manabu [1 ]
Fujihara, Shinobu [1 ]
机构
[1] Keio Univ, Fac Sci & Technol, Dept Appl Chem, Kohoku Ku, 3-14-1 Hiyoshi, Yokohama, Kanagawa 2238522, Japan
关键词
Chemical bath deposition; Growth from solutions; Oxides; Semiconducting materials; THIN-FILMS; STRUCTURAL-PROPERTIES; MORPHOLOGY; GROWTH; TRANSFORMATION; NANOCRYSTALS; ORIENTATION; EVOLUTION;
D O I
10.1016/j.jcrysgro.2020.125920
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this study, we fabricated Cu2O films on bare glass substrates by a chemical bath deposition technique, which consists of a seeding process and a subsequent film-growth process. Dense (1 1 1)-oriented Cu2O films were formed in an aqueous solution of copper (II) sulfate containing L-ascorbate and citrate ions at a low temperature of 80 degrees C. The film thickness and (1 1 1)-orientation degree (Lotgering factor) were both monotonically increased by simply repeating the film-growth process. As a result, a Cu2O film with a high (111)-orientation degree of 0.83 and a large thickness 1440 nm was obtained. Detailed chemical and structural characterizations suggested that as-deposited Cu2O films contained citrate ions and metallic Cu as impurities. We also found that a heat treatment at 500 degrees C under nitrogen flow was effective to remove these impurities.
引用
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页数:6
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