Microwave dielectric properties of low firing temperature stable scheelite structured (Ca,Bi)(Mo,V)O4 solid solution ceramics for LTCC applications

被引:176
作者
Guo, Huan-Huan [1 ,2 ]
Zhou, Di [1 ,2 ,3 ]
Pang, Li-Xia [3 ,4 ]
Qi, Ze-Ming [5 ]
机构
[1] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Elect Mat Res Lab, Key Lab,Minist Educ, Xian 710049, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Int Ctr Dielect Res, Xian 710049, Shaanxi, Peoples R China
[3] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England
[4] Xian Technol Univ, Microoptoelect Syst Labs, Xian 710032, Shaanxi, Peoples R China
[5] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
Scheelite structure; Temperature-stable; LTCC; Microwave dielectric properties; RAY PHOTOELECTRON-SPECTROSCOPY; SINTERING BEHAVIOR; CRYSTAL-STRUCTURE; OXIDATION; BISMUTH; OXIDES; BIVO4; BI;
D O I
10.1016/j.jeurceramsoc.2019.02.010
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the present work, a systematic study on microwave properties of Ca1-xBixMo1-xVxO4 (0.2 <= x <= 0.5) solid solution ceramics synthesized by using the traditional solid-state reaction method was conducted. A scheelite structured solid solution was formed in the composition range 0.2 <= x <= 0.5. We successfully prepared a microwave dielectric ceramic Ca1-xBixMo1-xVxO4 with a temperature coefficient of resonant frequency (TCF) near to zero and a low sintering temperature by using (Bi, V) substituted (Ca, Mo) in CaMoO4 to form a solid solution. The Ca1-xBixMo1-xVxO4 ceramic can be well sintered at only 870 degrees C and exhibits good microwave dielectric properties with a permittivity (epsilon(r)) (similar to)21.9, a Qf (similar to)18,150 GHz (at 7.2 GHz) (Q = quality factor = 1/dielectric loss; f = resonant frequency), a TCF similar to + 0.1 ppm/ degrees C. The chemical compatibility with silver indicated that the Ca1-xBixMo1-xVxO4 ceramic might be a good candidate for the LTCC applications.
引用
收藏
页码:2365 / 2373
页数:9
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