First principles study of bonding, adhesion, and electronic structure at the Cu2O(111)/ZnO(10(1)over-bar0) interface

被引:24
作者
Bendavid, Leah Isseroff [1 ]
Carter, Emily A. [2 ,3 ]
机构
[1] Princeton Univ, Dept Chem & Biol Engn, Princeton, NJ 08544 USA
[2] Princeton Univ, Dept Mech & Aerosp Engn, Program Appl & Computat Math, Princeton, NJ 08544 USA
[3] Princeton Univ, Andlinger Ctr Energy & Environm, Princeton, NJ 08544 USA
关键词
Density functional theory; Adhesion energy; Semiconductor interface; Electronic properties; Cuprous oxide; Zinc oxide; METHANOL SYNTHESIS; AB-INITIO; ZNO; SURFACE; STABILITY; OXIDE; DIFFRACTION; ACCURATE; COPPER; STATES;
D O I
10.1016/j.susc.2013.07.027
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Density functional theory (DFT)-based methods are used to understand atomic level interactions and calculate adhesion energies of the Cu2O (111)/ZnO(10 (1) over bar0) interface with varying Cu2O coating thickness. We first establish an accurate model of the ZnO substrate, validating DFT + U against the more accurate hybrid-DFT to calculate properties of bulk wurtzite ZnO and the ZnO(10 (1) over bar0) surface. DFT + U is then used to analyze the structure of the Cu2O(111) surface, characterizing the formation of surface copper dimers. The Cu2O(111)/ZnO(10 (1) over bar0) interface is found to be only weakly interacting, with a DFT + U-derived adhesion energy of 0.85 +/- 0.07 J/m(2). Charge density analysis reveals that some interface stabilization occurs because of local Zn-O and Cu-O bonding interactions at the interface. We find that the overall impact of the ZnO substrate on the electronic structure of the Cu2O overlayer is to reduce the Cu2O band gap. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:62 / 71
页数:10
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