Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate

被引：4

作者：

Liu, Z. Q. ^{[1
]}

Chim, W. K. ^{[1
]}

Chiam, S. Y. ^{[2
]}

Pan, J. S. ^{[2
]}

Ng, C. M. ^{[3
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

[3] GLOBALFOUNDRIES Singapore Pte Ltd, Singapore 738406, Singapore

来源：

THIN SOLID FILMS | 2013年 / 534卷

关键词：

Lanthanum yttrium aluminate; Lanthanum aluminate; Yttrium; Band offset; Band gap; Dielectric constant; Leakage current; RAY PHOTOELECTRON-SPECTROSCOPY; MULTIELECTRON EXCITATIONS; SATELLITES; INSULATORS;

D O I：

10.1016/j.tsf.2013.02.068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the effects of adding yttrium (Y) in bulk lanthanum aluminate (LaAlO3 or LAO) by investigating the quaternary compound oxide, lanthanum yttrium aluminum oxide La0.3Y0.7AlO3 (LYAO), on silicon (Si). It is found that the inclusion of Y to LAO increases the band gap by similar to 0.9 eV without compromising the dielectric constant. The enhancement in the band gap results in larger band offsets in LYAO and we also observe a decrease in leakage current at low voltage accumulation bias for Al/LYAO/Si as compared to Al/LAO/Si. In addition, the interface trap density of the Al/LYAO/Si structure remains comparable to that of Al/LAO/Si. Our findings show that LYAO is an attractive high dielectric constant material for use in next-generation low standby power devices. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：177 / 182

页数：6

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