Electrical property measurements of Cr-N codoped TiO2 epitaxial thin films grown by pulsed laser deposition

被引:11
作者
Jacimovic, J. [1 ]
Gaal, R. [1 ]
Magrez, A. [1 ]
Forro, L. [1 ]
Regmi, M. [2 ]
Eres, Gyula [2 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Phys Complex Matter, CH-1015 Lausanne, Switzerland
[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
关键词
ANATASE TIO2; METAL; CONDUCTIVITY; PRESSURE;
D O I
10.1063/1.4804240
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature dependent resistivity and thermo-electric power of Cr-N codoped TiO2 were compared with that of single element N and Cr doped and undoped TiO2 using epitaxial anatase thin films grown by pulsed laser deposition on (100) LaAlO3 substrates. The resistivity plots and especially the thermoelectric power data confirm that codoping is not a simple sum of single element doping. However, the negative sign of the Seebeck coefficient indicates electron dominated transport independent of doping. The narrowing distinction among the effects of different doping methods combined with increasing resistivity of the films with improving crystalline quality of TiO2 suggest that structural defects play a critical role in the doping process. (C) 2013 AIP Publishing LLC.
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页数:4
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