Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates

被引：36

作者：

Morita, T

Kikuchi, K

Nomura, I

Kishino, K

机构：

[1] Dept. of Elec. and Electronics Eng., Sophia University, Chiyoda-ku, Tokyo 102, 7-1, Kioi-cho

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 03期

关键词：

bandgap energy (Eg); electron probe x-ray microanalysis (EPMA); MgZnCdSe; molecular beam epitaxy (MBE); photoluminescence (PL);

D O I：

10.1007/BF02666615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wide-gap II-VI MgZnCdSe quaternary compounds were grown on InP substrates by molecular beam epitaxy, for the first time. Changing the Mg composition (x = 0 to 0.63), various Mg-x(ZnyCd1-y)(1-x)Se lattice-matched to InP were grown. Mirror-like surface morphologies and streaky reflection high energy electron diffraction patterns of MgZnCdSe were obtained. With increased Mg compositions, the band-edge emissions wavelength in photoluminescence spectra was shifted from 572 nm (2.17 eV) to 398 nm (3.12 eV) at 15K. Furthermore, the absolute PL peak intensity increased drastically with increased band-edge emission, being accompanied by a relative decrement in the deep level emission intensities were also observed.

引用

页码：425 / 430

页数：6

共 9 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY ZN1-XCDXSE ON INP SUBSTRATES [J].

DAI, N ;

CAVUS, A ;

DZAKPASU, R ;

TAMARGO, MC ;

SEMENDY, F ;

BAMBHA, N ;

HWANG, DM ;

CHEN, CY .

APPLIED PHYSICS LETTERS, 1995, 66 (20) :2742-2744

[2] BLUE-GREEN INJECTION-LASERS CONTAINING PSEUDOMORPHIC ZN1-XMGXSYSE1-Y CLADDING LAYERS AND OPERATING UP TO 394-K [J].

GAINES, JM ;

DRENTEN, RR ;

HABERERN, KW ;

MARSHALL, T ;

MENSZ, P ;

PETRUZZELLO, J .

APPLIED PHYSICS LETTERS, 1993, 62 (20) :2462-2464

[3] MICROSTRUCTURE AND PSEUDOMORPHISM IN MOLECULAR-BEAM EPITAXIALLY GROWN ZNCDS ON GAAS(001) [J].

GUHA, S ;

WU, BJ ;

CHENG, H ;

DEPUYDT, JM .

APPLIED PHYSICS LETTERS, 1993, 63 (15) :2129-2131

[4]

ICHIMURA Y, 1994, 8 INT C MOL BEAM EP, P278

[5] ADVANCES IN BLUE LASER-DIODES [J].

ISHIBASHI, A ;

MORI, Y .

JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) :677-685

[6] ZNCDSE/ZNSSE/ZNMGSSE SCH LASER-DIODE WITH A GAAS BUFFER LAYER [J].

ITOH, S ;

NAKAYAMA, N ;

MATSUMOTO, S ;

NAGAI, M ;

NAKANO, K ;

OZAWA, M ;

OKUYAMA, H ;

TOMIYA, S ;

OHATA, T ;

IKEDA, M ;

ISHIBASHI, A ;

MORI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (7A) :L938-L940

[7]

NOMURA I, UNPUB J CRYST GROWTH

[8] EPITAXIAL-GROWTH OF P-TYPE ZNMGSSE [J].

OKUYAMA, H ;

KISHITA, Y ;

MIYAJIMA, T ;

ISHIBASHI, A ;

AKIMOTO, K .

APPLIED PHYSICS LETTERS, 1994, 64 (07) :904-906

[9] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

OKUYAMA, H ;

NAKANO, K ;

MIYAJIMA, T ;

AKIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1620-L1623

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