A 60 GHz 3-dB tandem coupler using offset broadside-coupled lines on a silicon substrate

被引:0
作者
Kiumarsi, Hamid [1 ]
Ito, Hiroyuki [1 ]
Okada, Kenichi [2 ]
Uemichi, Yusuke [3 ]
Chiba, Yasuto [3 ]
Ishihara, Noboru [1 ]
Masu, Kazuya [1 ]
机构
[1] Tokyo Inst Technol, Solut Res Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
[3] Fujikura Ltd, Electron Device Lab, Sakura, Chiba 2858550, Japan
来源
IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 02期
关键词
60 GHz band; tandem coupler; 3-dB coupler; broadside-coupled lines; quadrature; millimeter-wave passive devices; TRANSMISSION-LINES; MODEL;
D O I
10.1587/elex.10.20120901
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, a 60 GHz tandem coupler using offset broadside-coupled lines is proposed on a silicon-based integrated passive device technology. Over the frequency band of 57-66 GHz, the measured insertion loss, amplitude imbalance, input return loss, isolation and phase error of the designed tandem coupler are better than 0.67 dB, 0.31 dB, 27.9 dB, 29.7 dB and 3.7 degrees respectively. To the best of our knowledge the proposed coupler achieves the lowest reported insertion loss and amplitude imbalance for a 3-dB coupler on a silicon substrate at 60 GHz band. Furthermore using the even-and odd-mode analysis, the reason for a high directivity of edge-coupled lines and a low coupling level of broadside-coupled lines on the adopted technology is investigated and a solution for increasing the coupling level of broadside-coupled lines is proposed.
引用
收藏
页数:12
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