Improvement of the crystallinity of ZnO thin films and frequency characteristics of a film bulk acoustic wave resonator by using an Ru buffer layer and annealing treatment

被引：14
作者：
Kim, EK
Lee, TY
Hwang, HS
Kim, YS
Park, Y
Song, JT
机构：
[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, Kyunggi Do, South Korea
[2] Sungkyunkwan Univ, Technol Innovat Ctr, Suwon 440746, Kyunggi Do, South Korea
[3] Korea Railrd Res Inst, Signaling & Elect Engn Res Dept, Uiwang City 437050, Kyongi Do, South Korea
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2006年 / 39卷 / 1-4期
关键词：
FBARs; Ru buffer layer; membrane type; ZnO; pulse dc sputtering;
D O I：
10.1016/j.spmi.2005.08.066
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We deposited zinc oxide (ZnO) thin films on an Ru buffer layer in order to protect the amorphous layer at the ZnO and Al interface. Also, ZnO thin films grown by means of an annealing treatment were investigated as regards improvement of the c-axis orientation and morphology properties. In the X-ray diffraction (XRD) pattern, it was observed that there was an improvement of the (002) orientation achieved by the variation of the annealing treatment temperature. Also, the surface roughness and specific resistance were increased by the annealing treatment but the full width at half-maximum (FWHM) was decreased. For film bulk acoustic resonators (FBARs) fabricated using these results, we finally confirmed that a resonant frequency of 0.79 GHz, without a shift, was measured. In addition, the values of the return loss were improved by the annealing treatment. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：138 / 144
页数：7
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