Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures

被引：12

作者：

Xia, B. ^{[1
]}

Ren, P. ^{[1
]}

Sulaev, Azat ^{[1
]}

Li, Z. P. ^{[2
]}

Liu, P. ^{[1
]}

Dong, Z. L. ^{[2
]}

Wang, L. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 638798, Singapore

来源：

AIP ADVANCES | 2012年 / 2卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

SINGLE DIRAC CONE; SURFACE-STATES; NANORIBBONS; BI2TE3; TRANSPORT; BI2SE3;

D O I：

10.1063/1.4769894

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Topological insulator is composed of an insulating bulk state and time reversal symmetry protected two-dimensional surface states. One of the characteristics of the surface states is the locking between electron momentum and spin orientation. Here, we report a novel in-plane anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures. To explain the novel effect, we propose that the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructure forms a spin-valve or Giant magnetoresistance device due to spin-momentum locking. The novel in-plane anisotropic magnetoresistance can be explained as a Giant magnetoresistance effect of the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4769894]

引用

页数：11

共 52 条

[1] STM Imaging of Electronic Waves on the Surface of Bi2Te3: Topologically Protected Surface States and Hexagonal Warping Effects [J].

Alpichshev, Zhanybek ;

Analytis, J. G. ;

Chu, J. -H. ;

Fisher, I. R. ;

Chen, Y. L. ;

Shen, Z. X. ;

Fang, A. ;

Kapitulnik, A. .

PHYSICAL REVIEW LETTERS, 2010, 104 (01)

[2] Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3: A comparison of photoemission and Shubnikov-de Haas measurements [J].

Analytis, James G. ;

Chu, Jiun-Haw ;

Chen, Yulin ;

Corredor, Felipe ;

McDonald, Ross D. ;

Shen, Z. X. ;

Fisher, Ian R. .

PHYSICAL REVIEW B, 2010, 81 (20)

[3] Tunable Dirac cone in the topological insulator Bi2-xSbxTe3-ySey [J].

Arakane, T. ;

Sato, T. ;

Souma, S. ;

Kosaka, K. ;

Nakayama, K. ;

Komatsu, M. ;

Takahashi, T. ;

Ren, Zhi ;

Segawa, Kouji ;

Ando, Yoichi .

NATURE COMMUNICATIONS, 2012, 3

[4] Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films [J].

Bason, Y ;

Klein, L ;

Yau, JB ;

Hong, X ;

Ahn, CH .

APPLIED PHYSICS LETTERS, 2004, 84 (14) :2593-2595

[5] Spin and Charge Transport on the Surface of a Topological Insulator [J].

Burkov, A. A. ;

Hawthorn, D. G. .

PHYSICAL REVIEW LETTERS, 2010, 105 (06)

[6] Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals [J].

Butch, N. P. ;

Kirshenbaum, K. ;

Syers, P. ;

Sushkov, A. B. ;

Jenkins, G. S. ;

Drew, H. D. ;

Paglione, J. .

PHYSICAL REVIEW B, 2010, 81 (24)

[7] Weak Antilocalization in Bi2(SexTe1-x)3 Nanoribbons and Nanoplates [J].

Cha, Judy J. ;

Kong, Desheng ;

Hong, Seung-Sae ;

Analytis, James G. ;

Lai, Keji ;

Cui, Yi .

NANO LETTERS, 2012, 12 (02) :1107-1111

[8] Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi2Se3 [J].

Checkelsky, J. G. ;

Hor, Y. S. ;

Cava, R. J. ;

Ong, N. P. .

PHYSICAL REVIEW LETTERS, 2011, 106 (19)

[9] Quantum Interference in Macroscopic Crystals of Nonmetallic Bi2Se3 [J].

Checkelsky, J. G. ;

Hor, Y. S. ;

Liu, M. -H. ;

Qu, D. -X. ;

Cava, R. J. ;

Ong, N. P. .

PHYSICAL REVIEW LETTERS, 2009, 103 (24)

[10] Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport [J].

Chen, J. ;

He, X. Y. ;

Wu, K. H. ;

Ji, Z. Q. ;

Lu, L. ;

Shi, J. R. ;

Smet, J. H. ;

Li, Y. Q. .

PHYSICAL REVIEW B, 2011, 83 (24)

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