A novel electrothermal IGBT modeling approach for circuit simulation design

被引：13

作者：

Rosu, M. ^{[1
]}

Wu, X. ^{[1
]}

Cendes, Z. ^{[1
]}

Aurich, J. ^{[2
]}

Hornkamp, M. ^{[3
]}

机构：

[1] Ansoft Co, Pittsburgh, PA USA

[2] Koblenz Univ Appl Sci, Koblenz, Germany

[3] Infineon Technologies AG, Neubiberg, Germany

来源：

APEC 2008: TWENTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-4 | 2008年

关键词：

D O I：

10.1109/APEC.2008.4522953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a novel electrothermal coupling simulation model for analyzing IGBT power devices for large scale applications. The model calculates the conduction and switching losses in a wide range of operation points and returns an accurate temperature prediction. The electrical and thermal model parameters are extracted from the manufacturer catalog datasheet values. The new model device on-voltage characteristics show good agreement with measured results. The thermal model can take into account lateral heat spreading within the module and thermal interference among power devices. The features of the present model are described and compared against the simulation results of a half-bridge circuit and three phase inverter topology.

引用

页码：1685 / +

页数：2