Effect of dc and ac excitations on the longitudinal resistance of a two-dimensional electron gas in highly doped GaAs quantum wells

被引：96
作者：
Bykov, AA [1 ]
Zhang, JQ
Vitkalov, S
Kalagin, AK
Bakarov, AK
机构：
[1] CUNY City Coll, Dept Phys, New York, NY 10031 USA
[2] Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
PHYSICAL REVIEW B | 2005年 / 72卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.72.245307
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Linear ac (888 Hz) resistance of highly mobile two-dimensional electrons in GaAs heavily doped quantum wells is studied at different magnitudes of dc and ac (10 KHz to 20 GHz) excitations. In the dc excitation regime the differential resistance oscillates with the dc current and external magnetic field similar to that observed earlier in AlGaAs/GaAs heterostructures [C. L. Yang , Phys. Rev. Lett. 89, 076801 (2002)]. At external ac excitations the resistance is also found to be oscillating with the magnetic field. However the form of the oscillations is considerably different from the dc case. We show that at frequency below 100 KHz the difference is the result of a specific average of the dc differential resistance during the period of the external ac excitations.
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