High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors With Different Absorber Doping

被引：6

作者：

Huang, Jian ^{[1
]}

Dai, Zhecheng ^{[1
]}

Shen, Zhijian ^{[1
]}

Wang, Zongti ^{[1
]}

Zhou, Zhiqi ^{[1
]}

Wang, Ziyu ^{[2
]}

Peng, Bo ^{[2
]}

Liu, Weimin ^{[2
]}

Chen, Baile ^{[1
]}

机构：

[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai, Peoples R China

[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 12期

基金：

中国国家自然科学基金;

关键词：

High-speed photodetectors (PDs); InAs/InAsSb type-II superlattices (T2SL); mid-wavelength infrared (MWIR) photodetectors; uni-traveling carrier (UTC) photodetectors; PHOTODIODE;

D O I：

10.1109/TED.2022.3218489

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we studied two high-speed mid-wave infrared InAs/InAsSb type-II superlattice (T2SL) uni-traveling carrier (UTC) photodetectors (PDs) with different graded p-doping profiles in the absorber. It is found that the UTC device with higher absorber p-doping (hereafter referred to as Device A) has a larger 3-dB bandwidth than that of the device with lower absorber p-doping (hereafter referred to as Device B). However, Device A shows a higher dark current and lower responsivity performance than Device B. The peak responsivity of Devices A and B is about 0.9 and 1.2 A/W, respectively, under-1 V at room temperature. The performance comparisons of both devices are explored in detail. These results could contribute a further step toward developing high-speed InAs/InAsSb T2SL PDs.

引用

页码：6890 / 6896

页数：7

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