Phase identification and XPS studies of Cu(In,Ga)Se2 thin films

被引：14

作者：

Calderon, C. ^{[1
]}

Bartolo-Perez, P. ^{[2
]}

Rodriguez, O. ^{[3
]}

Gordillo, G. ^{[1
]}

机构：

[1] Univ Nacl Colombia, Dept Fis, Bogota, Colombia

[2] IPN, Ctr Invest & Estudios Avanzados, Dept Fis Aplicada, Merida, Yuc, Mexico

[3] Univ Nacl Colombia, Dept Quim, Bogota, Colombia

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 11期

关键词：

Solar cells; XPS; XRD; Thin films;

D O I：

10.1016/j.mejo.2008.01.071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present results concerning the effect of preparation conditions on the surface chemistry and crystalline phase of Cu(In,Ga)Se(2) (CIGS) thin films grown by the chemical reaction of the precursor species in tow and three stage processes. The CIGS samples were studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis. It was found that the bulk of the samples grown in a three stage process contains mainly the CIGS phase; however, secondary phases like In(2)Se(3), Cu(2)Se and In(2)O were additionaly identified at the surface of CIGS samples grown in two stages. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1324 / 1326

页数：3

共 3 条

[1] In situ monitoring of the growth of Cu(In,Ga)Se2 thin films [J].