Electrochemical performance of Polyaniline based symmetrical energy storage device

被引:32
|
作者
Waikar, Maqsood R. [1 ]
Rasal, Akash S. [2 ]
Shinde, Nitin S. [3 ]
Dhas, Suprimkumar D. [4 ]
Moholkar, Annasaheb, V [4 ]
Shirsat, Mahendra D. [5 ]
Chakarvarti, Shiv K. [6 ]
Sonkawade, Rajendra G. [1 ]
机构
[1] Shivaji Univ, Dept Phys, Radiat & Mat Res Lab, Kolhapur 416004, Maharashtra, India
[2] Shivaji Univ, Dept Chem, Kolhapur 416004, Maharashtra, India
[3] KBP Coll, Dept Phys, Islampur 415409, MS, India
[4] Shivaji Univ, Dept Phys, Thin Films Nanomat Lab, Kolhapur 416004, Maharashtra, India
[5] Dr Babasaheb Ambedkar Marathawada Univ, RUSA Ctr Adv Sensor Technol, Dept Phys, Aurangabad 431004, Maharashtra, India
[6] Faridabad & Ex Natl Inst Technol, Manav Rachna Int Inst Res & Studies, Kurukshetra 136119, Haryana, India
关键词
Electro-deposition; Polyaniline; Nanofibers; Aqueous device; GRAPHENE OXIDE-POLYANILINE; ELECTROSPUN POLYANILINE; CARBON; COMPOSITES; NANOFIBERS; SUPERCAPACITORS; ELECTROPOLYMERIZATION; FILMS; NANOCOMPOSITES; EFFICIENT;
D O I
10.1016/j.mssp.2020.105291
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nowadays, the flexibility of energy devices acquired more attention due to various portable electronic devices. Here we report a rapid, facile and cost-effective route to synthesize binder-free Polyaniline (PANI) electrode via a simple potentiostatic method to fabricate stable supercapacitor (SCs). The deposition time was varied to optimize the properties and performance of SCs. The formation of PANI thin films confirmed by XRD, FTIR and Raman analysis. The resulting binder-free PANI electrode exhibits porous nanofibers morphology, which provides a high specific surface area confirmed by BET measurement and high specific capacitance (C-s). Benefited from the porosity and high specific surface area of PANI electrodes, maximum C-s observed 473 F/g at 5 mV/s scan rate and 76% cyclic retention showed after the 2000th cycles. Furthermore, the resulting symmetric PANI energy storage device exploits 161 F/g C-s at a 5 mV/s scan rate with 47% cyclic retention after the 2000th cycles.
引用
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页数:11
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