Threshold Voltage Modeling of GaN Based Normally-Off Tri-gate Transistor

被引：5
作者：
Yadav, Chandan [1 ]
Kushwaha, Pragya [1 ]
Agarwal, Harshit [1 ]
Chauhan, Yogesh Singh [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, UP, India
来源：
2014 ANNUAL IEEE INDIA CONFERENCE (INDICON) | 2014年
关键词：
ALGAN/GAN HEMTS;
D O I：
10.1109/INDICON.2014.7030522
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In this paper, a behavioral model of threshold voltage for normally-off (enhancement mode) AIGaN/GaN based tri-gate HEMT is proposed. AIGaN/GaN based tri-gate HEMT devices have additional sidewall gates and show threshold voltage variation with decreasing device width. The proposed model captures strain relaxation with reduction in device width, which is one of the primary reason for change in V-th in AIGaN/GaN tri-gate devices. Model shows excellent agreement with state-ofthe- art experimental and simulation data.
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收藏
页数：4
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