Enhanced flux pinning properties in Bi1.6Pb0.4Sr2-xKxCa2Cu3O10+ compounds

被引：12

作者：

Tran, Duc H. ^{[1
]}

Pham, An T. ^{[1
]}

Le, Tien M. ^{[1
,3
]}

Anh, Do T. K. ^{[1
]}

Phan, Yen T. ^{[1
]}

Man, Nguyen K. ^{[2
]}

Duong Pham ^{[3
]}

Kang, Won-Nam ^{[3
]}

机构：

[1] VNU Univ Sci, Fac Phys, Hanoi, Vietnam

[2] Hanoi Univ Sci & Technol, Int Training Inst Mat Sci, Hanoi, Vietnam

[3] Sungkyunkwan Univ, Dept Phys, Suwon, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 09期

关键词：

CRITICAL-CURRENT DENSITY; POLYCRYSTALLINE YBA2CU3O7-DELTA; BI-2212; CERAMICS; PHASE-FORMATION; NA; BI; SUPERCONDUCTIVITY; TEMPERATURE; IMPROVEMENT; TRANSITION;

D O I：

10.1007/s10854-019-01139-w

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of K substitutions on the structural and superconducting properties of Bi-Pb-Sr-Ca-Cu-O (BPSCCO) system has been investigated. Polycrystalline samples with stoichiometry of Bi1.6Pb0.4Sr2-xKxCa2Cu3O10+, where x=(0.00, 0.02, 0.04, 0.06, 0.08, and 0.1), were prepared by using the conventional solid state reaction technique. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) data showed that all samples consisted of high T-c (Bi-2223) and low T-c (Bi-2212) phases, and their volume fractions were found to vary with K content (x). The zero critical temperature was found to decrease from (104.5 to 94.6) K, which was attributed to the decreases in hole carrier concentration. At 65K, the magnetization critical current density (J(c)) of the K-substituted samples was enhanced in comparison with that of the pure one. The J(c) enhancement might be attributed to the formation of point defects resulting from the partial substitutions of K into Sr site in the BPSCCO system. In addition, the dominant pinning mechanism was found to be point-like pinning, as described using the Dew-Hughes model.

引用

页码：8233 / 8238

页数：6

共 31 条

[1] Transport current density of (Bi1.6Pb0.4)Sr2Ca2Cu3O10 superconductor added with different nano-sized ZnO [J].