Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films

被引:27
作者
Araujo, E. B. [1 ]
Lima, E. C. [1 ]
Bdikin, I. K. [2 ,3 ]
Kholkin, A. L. [4 ,5 ]
机构
[1] UNESP Univ Estadual Paulista, Fac Engn Ilha Solteira, Dept Quim & Fis, BR-15385000 Ilha Solteira, SP, Brazil
[2] Univ Aveiro, Dept Mech Engn, P-3810193 Aveiro, Portugal
[3] Univ Aveiro, TEMA, P-3810193 Aveiro, Portugal
[4] Univ Aveiro, Dept Mat & Ceram Engn, P-3810193 Aveiro, Portugal
[5] Univ Aveiro, CICECO, P-3810193 Aveiro, Portugal
基金
巴西圣保罗研究基金会;
关键词
X-RAY-DIFFRACTION; RIETVELD REFINEMENT; PBZR1-XTIXO3; PZT; IMPRINT BEHAVIOR; POLARIZATION; PYROCHLORE; KINETICS; PHASES;
D O I
10.1063/1.4801961
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lead zirconate titanate Pb(Zr0.50Ti0.50)O-3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric, and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 degrees C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 degrees C. For pyrochlore-free PZT thin films, a small (100)-orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. The increase of self-polarization with the film thickness increasing from 200 nm to 710 nm suggests that Schottky barriers and/or mechanical coupling near the film-substrate interface are not primarily responsible for the observed self-polarization effect in our films. (C) 2013 AIP Publishing LLC
引用
收藏
页数:8
相关论文
共 40 条
[1]   Polarization and self-polarization in thin PbZr1-xTixO3 (PZT) films [J].
Afanasjev, VP ;
Petrov, AA ;
Pronin, IP ;
Tarakanov, EA ;
Kaptelov, EJ ;
Graul, J .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (39) :8755-8763
[2]   PZT thin films obtained from oxide precursors [J].
Araújo, EB ;
Eiras, JA .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1998, 17 (10) :833-835
[3]   SYNTHESIS AND CHARACTERIZATION OF PB (ZRXTI1-X)O3 THIN-FILMS PRODUCED BY AN AUTOMATED LASER ABLATION DEPOSITION TECHNIQUE [J].
AUCIELLO, O ;
MANTESE, L ;
DUARTE, J ;
CHEN, X ;
ROU, SH ;
KINGON, AI ;
SCHREINER, AF ;
KRAUSS, AR .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) :5197-5207
[4]   ORIENTATION OF RAPID THERMALLY ANNEALED LEAD-ZIRCONATE-TITANATE THIN-FILMS ON (111) PT SUBSTRATES [J].
BROOKS, KG ;
REANEY, IM ;
KLISSURSKA, R ;
HUANG, Y ;
BURSILL, L ;
SETTER, N .
JOURNAL OF MATERIALS RESEARCH, 1994, 9 (10) :2540-2553
[5]   Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition [J].
Cillessen, JFM ;
Prins, MWJ ;
Wolf, RM .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2777-2783
[6]   Physics of thin-film ferroelectric oxides [J].
Dawber, M ;
Rabe, KM ;
Scott, JF .
REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130
[7]   Effects of the top-electrode size on the piezoelectric properties (d33 and S) of lead zirconate titanate thin films [J].
Gerber, P ;
Roelofs, A ;
Kügeler, C ;
Böttger, U ;
Waser, R ;
Prume, K .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) :2800-2804
[8]   Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors [J].
Gruverman, A ;
Rodriguez, BJ ;
Kingon, AI ;
Nemanich, RJ ;
Tagantsev, AK ;
Cross, JS ;
Tsukada, M .
APPLIED PHYSICS LETTERS, 2003, 83 (04) :728-730
[9]   Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films [J].
Gruverman, A ;
Rodriguez, BJ ;
Nemanich, RJ ;
Kingon, AI .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2734-2739
[10]   Principle of ferroelectric domain imaging using atomic force microscope [J].
Hong, S ;
Woo, J ;
Shin, H ;
Jeon, JU ;
Pak, YE ;
Colla, EL ;
Setter, N ;
Kim, E ;
No, K .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1377-1386