Non-Markovian memory effects in GaN lasers

被引：2

作者：

Hughes, S

机构：

[1] Department of Physics, University of Tokyo, Tokyo 113, 7-3-1 Hongo, Bunkyo-Ku

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 02期

关键词：

semiconductors; optical properties; carrier-carrier interaction;

D O I：

10.1016/S0038-1098(97)00195-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Non-Markovian carrier-carrier memory effects calculated for the wide-bandgap GaN optical amplifier are shown to be important for time scales of up to 200fs and 50fs for the holes and electrons, respectively. Ultrafast carrier-carrier scattering processes, which occur within a relatively small energy range, manifest in correlation times which are approximately double those calculated for GaAs. Implications for nonlinear saturation and optical gain studies of GaN lasers are discussed. (C) 1997 Elsevier Science Ltd.

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收藏

页码：107 / 112

页数：6

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