Highly linear wideband CMOS RF power amplifier with active feedback in 130 nm CMOS technology

被引：0
|
作者：
Khan, Muhammad Abdullah [1 ]
Bousseaud, Pierre [1 ]
Negra, Renato [1 ]
机构：
[1] Rhein Westfal TH Aachen, Chair High Frequency Elect, D-52074 Aachen, Germany
来源：
2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年
关键词：
Wideband; CMOS; Power Amplifier; Feedback; Linearity; Efficiency;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wideband active feedback technique for CMOS RF power amplifier is proposed. The amplifier is a single stage cascode which incorporates common drain based active feedback resulting in input impedance compression which ultimately leads to wideband matching after transformation. On the output side, a three-section LC balun is incorporated as Load Transformation Network. The proposed concept, with three-section balun, provides the wideband optimum impedance at the output of the amplifier and performs differential to single-ended conversion as well. Due to feedback, the amplifier achieves an input reflection coefficient S-11 of less than -10 dB in 600MHz bandwidth. For the large signal continuous-wave measurements, the amplifier delivers maximum saturated output power upto 27 dBm in the 600MHz span from 500MHz to 1.1 GHz with good efficiency.
引用
收藏
页码：273 / 276
页数：4
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