Hybrid Structures and Strain-Tunable Electronic Properties of Carbon Nanothreads

被引:15
作者
Wu, Weikang [1 ]
Tai, Bo [1 ]
Guan, Shan [1 ,2 ]
Yang, Shengyuan A. [1 ]
Zhang, Gang [3 ]
机构
[1] Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, Singapore
[2] Beijing Inst Technol, Sch Phys, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China
[3] Agcy Sci Technol & Res, Inst High Performance Comp, 1 Fusionopolis Way, Singapore 138632, Singapore
关键词
CONDUCTIVITY; CONDUCTANCE; NANOTUBES; DEFECTS; BENZENE; STATES;
D O I
10.1021/acs.jpcc.7b11549
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The newly synthesized ultrathin carbon nanothreads have drawn great attention from the carbon community. Here, based on first-principles calculations, we investigate the electronic properties of carbon nanothreads under the influence of two important factors: the Stone Wales (SW) type defect and the lattice strain. The SW defect is intrinsic to the polymer-I structure of the nanothreads and is a building block for the general hybrid structures. We find that the bandgap of the nanothreads can be tuned by the concentration of SW defects in a wide range of 3.92-4.82 eV, interpolating between the bandgaps of sp(3)-(3,0) structure and the polymer-I structure. Under strain, the bandgaps of all the structures, including the hybrid ones, show a nonmonotonic variation: the bandgap first increases with strain, then drops at large strain above 10%. The gap size can be effectively tuned by strain in a wide range (>0.5 eV). Interestingly, for sp(3)-(3,0) structure, a switch of band ordering occurs under strain at the valence band maximum, and for the polymer-I structure, an indirect-to-direct-bandgap transition occurs at about 8% strain. The result also indicates that the presence of SW defects tends to stabilize the bandgap size against strain. Our findings suggest the great potential of structure- and strain-engineered carbon nanothreads in optoelectronic and photoelectrochemical applications as well as stress sensors.
引用
收藏
页码:3101 / 3106
页数:6
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