In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

被引：56

作者：

Bertaud, Thomas ^{[1
]}

Sowinska, Malgorzata ^{[1
]}

Walczyk, Damian ^{[1
]}

Thiess, Sebastian ^{[2
]}

Gloskovskii, Andrei ^{[3
]}

Walczyk, Christian ^{[1
]}

Schroeder, Thomas ^{[1
,4
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

[2] Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany

[3] Johannes Gutenberg Univ Mainz, Inst Analyt & Anorgan Chem, D-55128 Mainz, Germany

[4] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 14期

关键词：

IMPACT;

D O I：

10.1063/1.4756897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistive switching in Ti/HfO2/TiN was investigated in-operando by hard x-ray photoelectron spectroscopy. In comparison with the virgin-state, ON- and OFF-states show enhanced Ti/TiOx/HfO2 interface oxidation, resulting from an oxygen-gettering activity of Ti. The formed TiOx layer acts in the resistive switching process as an oxygen reservoir in exchange with the non-stoichiometric HfO2-delta. A Ti1+/Ti3+ valence change redox reaction occurs between OFF-and ON-states. The peak shifts are attributed to space charge potentials created by the varying oxygen vacancy concentration at the interface. A push-pull model of oxygen vacancies as a function of voltage polarity is proposed to describe the mechanism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756897]

引用

页数：5

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