Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC

被引：25
作者：
Lo Giudice, A
Fizzotti, F
Manfredotti, C
Vittone, E [1 ]
Nava, F
机构：
[1] Univ Turin, CNR, INFM, Expt Phys Dept, Turin, Italy
[2] Univ Turin, NIS Ctr Excellence, Turin, Italy
[3] Univ Modena, Dept Phys, I-41100 Modena, Italy
[4] Univ Modena, Ist Nazl Fis Nucl, I-41100 Modena, Italy
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 22期
关键词：
D O I：
10.1063/1.2135507
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The pulse height response for He and H ions with energies between 1 and 6 MeV incident upon n-type 4H-SiC epitaxial Schottky diodes has been investigated. The average amount of energy, epsilon, given up by the incident radiation to form electron-hole pair in this material was obtained by comparison with the average energy loss per pair in silicon detectors and it was found to be (7.78 +/- 0.05) eV at room temperature. This value is smaller than that foreseen by Klein's semiempirical linear relationship between epsilon and the semiconductor band gap. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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