An accurate interband tunneling model for InAs/GaSb heterostructure devices

被引：4
|
作者：
Bin Shams, Md Itrat [1 ]
Xie, Yi [1 ]
Lu, Yeqing [1 ]
Fay, Patrick [1 ]
机构：
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5 | 2013年 / 10卷 / 05期
基金：
美国国家科学基金会;
关键词：
tunnel diode; transfer matrix; InAs/GaSb heterostructure; heterostructure backward diode; tunneling FET; MILLIMETER-WAVE DETECTORS;
D O I：
10.1002/pssc.201200624
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A numerical model that accurately describes interband tunneling in backward diodes and broken-gap tunnel diode structures based on the InAs/GaSb material system is described. The model applies the transfer matrix method to discretized bias-dependent energy band profiles to calculate the transmission probability for tunneling. The model has been validated against experimental results, with good agreement in the current-voltage and curvature coefficient having been obtained for a range of heterostructure backward diode and interband tunnel diode structures. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：740 / 743
页数：4
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