Distribution of current fluctuations in a bistable conductor

被引：20

作者：

Singh, S. ^{[1
]}

Peltonen, J. T. ^{[1
]}

Khaymovich, I. M. ^{[1
,2
,3
,4
]}

Koski, J. V. ^{[1
,5
]}

Flindt, C. ^{[1
]}

Pekola, J. P. ^{[1
]}

机构：

[1] Aalto Univ, Dept Appl Phys, Low Temp Lab, Aalto 00076, Finland

[2] Russian Acad Sci, Inst Phys Microstruct, GSP-105, Nizhnii Novgorod 603950, Russia

[3] Univ Grenoble Alpes, LPMMC, F-38042 Grenoble, France

[4] CNRS, F-38042 Grenoble, France

[5] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW B | 2016年 / 94卷 / 24期

基金：

芬兰科学院;

关键词：

DYNAMICAL ENSEMBLES; STATISTICS; THERMODYNAMICS; INFORMATION; TRANSPORT;

D O I：

10.1103/PhysRevB.94.241407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We measure the full distribution of current fluctuations in a single-electron transistor with a controllable bistability. The conductance switches randomly between two levels due to the tunneling of single electrons in a separate single-electron box. The electrical fluctuations are detected over a wide range of time scales and excellent agreement with theoretical predictions is found. For long integration times, the distribution of the time-averaged current obeys the large-deviation principle. We formulate and verify a fluctuation relation for the bistable region of the current distribution.

引用

页数：5

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