Distribution of current fluctuations in a bistable conductor

被引：19
作者：
Singh, S. [1 ]
Peltonen, J. T. [1 ]
Khaymovich, I. M. [1 ,2 ,3 ,4 ]
Koski, J. V. [1 ,5 ]
Flindt, C. [1 ]
Pekola, J. P. [1 ]
机构：
[1] Aalto Univ, Dept Appl Phys, Low Temp Lab, Aalto 00076, Finland
[2] Russian Acad Sci, Inst Phys Microstruct, GSP-105, Nizhnii Novgorod 603950, Russia
[3] Univ Grenoble Alpes, LPMMC, F-38042 Grenoble, France
[4] CNRS, F-38042 Grenoble, France
[5] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland
来源：
PHYSICAL REVIEW B | 2016年 / 94卷 / 24期
基金：
芬兰科学院;
关键词：
DYNAMICAL ENSEMBLES; STATISTICS; THERMODYNAMICS; INFORMATION; TRANSPORT;
D O I：
10.1103/PhysRevB.94.241407
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We measure the full distribution of current fluctuations in a single-electron transistor with a controllable bistability. The conductance switches randomly between two levels due to the tunneling of single electrons in a separate single-electron box. The electrical fluctuations are detected over a wide range of time scales and excellent agreement with theoretical predictions is found. For long integration times, the distribution of the time-averaged current obeys the large-deviation principle. We formulate and verify a fluctuation relation for the bistable region of the current distribution.
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页数：5
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