Growth and characterization of diamond films on TiN/Si(100) by microwave plasma chemical vapor deposition

被引：2

作者：

Chen, Wei-Chun ^{[1
]}

Wang, Wei-Lin ^{[1
]}

Tiwari, Rajanish N. ^{[1
]}

Chang, Li ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

关键词：

Diamond film; Nitrides; Chemical vapor deposition; Interface characterization; Morphology; NANOCRYSTALLINE DIAMOND; CVD DIAMOND; NUCLEATION; SURFACES; SILICON;

D O I：

10.1016/j.diamond.2008.10.018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline diamond films were deposited on silicon (100) substrate by microwave plasma chemical vapor disposition (MPCVD) using similar to 300 nm thick < 001 > textured titanium nitride (TiN) films as buffer layer which were prepared by radio-frequency reactive sputtering. The diamond/TiN films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The results show that no apparent change can be observed for the < 100 > oriented TiN buffer layers after MPCVD even with a negative bias voltage applied onto the substrates. (C) 2008 Published by Elsevier B.V.

引用

页码：124 / 127

页数：4

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