Silicon dopant imaging by dissipation force microscopy

被引：59

作者：

Stowe, TD ^{[1
]}

Kenny, TW

Thomson, DJ

Rugar, D

机构：

[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[3] Univ Manitoba, Dept Elect & Comp Engn, Winnipeg, MB R3T 5V6, Canada

[4] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 18期

关键词：

D O I：

10.1063/1.125149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Noncontact damping of a cantilever vibrating near a silicon surface was used to measure localized electrical dissipation. The dependence of the damping on tip-sample distance, applied voltage, carrier mobility, and dopant density was studied for n- and p-type silicon samples with dopant densities of 10(14)-10(18) cm(-3). Dopant imaging with 150 nm spatial resolution was demonstrated. (C) 1999 American Institute of Physics. [S0003-6951(99)01544-2].

引用

收藏

页码：2785 / 2787

页数：3

相关论文

共 13 条

[1] FREQUENCY-MODULATION DETECTION USING HIGH-Q CANTILEVERS FOR ENHANCED FORCE MICROSCOPE SENSITIVITY [J].

ALBRECHT, TR ;

GRUTTER, P ;

HORNE, D ;

RUGAR, D .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) :668-673

[2] LOCAL ELECTRICAL DISSIPATION IMAGED BY SCANNING FORCE MICROSCOPY [J].

DENK, W ;

POHL, DW .

APPLIED PHYSICS LETTERS, 1991, 59 (17) :2171-2173

[3] MAGNETIC FORCE MICROSCOPY UTILIZING AN ULTRASENSITIVE VERTICAL CANTILEVER GEOMETRY [J].

DICARLO, A ;

SCHEINFEIN, MR ;

CHAMBERLIN, RV .

APPLIED PHYSICS LETTERS, 1992, 61 (17) :2108-2110

[4]

Durig U, 1997, J APPL PHYS, V82, P3641, DOI 10.1063/1.365726

[5] Magnetic dissipation force microscopy [J].

Grutter, P ;

Liu, Y ;

LeBlanc, P ;

Durig, U .

APPLIED PHYSICS LETTERS, 1997, 71 (02) :279-281

[6] Eddy current microscopy [J].

Hoffmann, B ;

Houbertz, R ;

Hartmann, U .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S409-S413

[7]

KOPANSKI J, 1997, RESOLUTION TEST PATT

[8] Theory of magnetoelastic dissipation due to domain wall width oscillation [J].

Liu, Y ;

Grutter, P .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :5922-5926

[9] Ultrahigh vacuum atomic force microscopy: True atomic resolution [J].

Luthi, R ;

Meyer, E ;

Bammerlin, M ;

Baratoff, A ;

Howald, L ;

Gerber, C ;

Guntherodt, HJ .

SURFACE REVIEW AND LETTERS, 1997, 4 (05) :1025-1029

[10] Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases [J].

Nelson, MW ;

Schroeder, PG ;

Schlaf, R ;

Parkinson, BA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04) :1354-1360