Electron-beam-induced direct etching of graphene

被引：38

作者：

Thiele, Cornelius ^{[1
,2
]}

Felten, Alexandre ^{[1
,3
]}

Echtermeyer, Tim J. ^{[6
]}

Ferrari, Andrea C. ^{[6
]}

Casiraghi, Cinzia ^{[3
,4
,5
]}

v. Loehneysen, Hilbert ^{[2
,7
,8
]}

Krupke, Ralph ^{[1
,2
,9
]}

机构：

[1] Karlsruhe Inst Technol, Inst Nanotechnol, D-76021 Karlsruhe, Germany

[2] DFG Ctr Funct Nanostruct CFN, D-76028 Karlsruhe, Germany

[3] Free Univ Berlin, Dept Phys, D-14195 Berlin, Germany

[4] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England

[5] Univ Manchester, Photon Sci Inst, Manchester M13 9PL, Lancs, England

[6] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England

[7] Karlsruhe Inst Technol, Inst Phys, D-76128 Karlsruhe, Germany

[8] Karlsruhe Inst Technol, Inst Festkorperphys, D-76021 Karlsruhe, Germany

[9] Tech Univ Darmstadt, Inst Mat Wissensch, D-64287 Darmstadt, Germany

来源：

CARBON | 2013年 / 64卷

基金：

英国工程与自然科学研究理事会;

关键词：

CROSS-SECTIONS; IONIZATION; NANOTUBES; SINGLE;

D O I：

10.1016/j.carbon.2013.07.038

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present electron-beam-induced oxidation of single- and bilayer graphene devices in a low-voltage scanning electron microscope. We show that the injection of oxygen leads to targeted etching at the focal point, enabling us to pattern graphene with a resolution of better than 20 nm. Voltage-contrast imaging, in conjunction with finite-element simulations, explain the secondary-electron intensities and correlate them to the etch profile. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：84 / 91

页数：8

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