Counterdoped Pocket Thickness Optimization of Gate-on-Source-Only Tunnel FETs

被引：46
作者：
Kao, Kuo-Hsing [1 ,2 ]
Verhulst, Anne S. [2 ]
Vandenberghe, William G. [3 ]
De Meyer, Kristin [1 ,2 ]
机构：
[1] Katholieke Univ Leuven, B-3000 Louvain, Belgium
[2] IMEC, B-3001 Louvain, Belgium
[3] Univ Texas Dallas, Richardson, TX 75083 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 01期
关键词：
Fringing field; gate-on-source-only (GoSo); quantum confinement; tunnel field-effect transistor (TFET); vertical tunneling; FIELD-EFFECT TRANSISTORS;
D O I：
10.1109/TED.2012.2227115
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The optimized tunnel field-effect transistor with a gate electrode overlapping the source region exhibits a steeper subthreshold swing (SS) and a higher ON-state tunneling current than the transistor with a gate on the channel only. In the presence of a counterdoped pocket in the source region underneath the gate electrode, the vertical tunneling component dominates over the unwanted lateral tunneling component, and the performance variability is reduced compared to its no-pocket configuration. The optimal pocket thickness, which is a tradeoff between realistic gate work function and the desired SS, is dependent on the bandgap, electron or hole effective mass, permittivity, and tunneling orientation of semiconductor materials, as analyzed in detail in this paper. A numerical procedure is provided to determine the optimal pocket thickness for arbitrary semiconductor materials.
引用
收藏
页码：6 / 12
页数：7
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