Temperature-dependent exciton recombination in asymmetrical ZnCdSe ZnSe double quantum wells

被引：6

作者：

Yu, GY ^{[1
]}

Fan, XW ^{[1
]}

Zhang, JY ^{[1
]}

Zheng, ZH ^{[1
]}

Yang, BJ ^{[1
]}

Zhao, XW ^{[1
]}

Shen, DZ ^{[1
]}

Kong, XG ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Phys, Lab Excited State Proc, Changchun 130021, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1999年 / 32卷 / 13期

关键词：

D O I：

10.1088/0022-3727/32/13/311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent exciton recombination in asymmetrical ZnCdSe/ZnSe double quantum wells is studied by recording photoluminescence spectra and photoluminescence decay spectra. The exciton tunnelling from the wide well to the narrow well and the thermal dissociation of excitons are two factors that influence the exciton recombination in this structure. In the narrow well, both of the two processes decrease the emission intensity, whereas, in the wide well, these two processes have contrary influences on the exciton density. The change of the emission intensity depends on which is the stronger one.

引用

页码：1506 / 1510

页数：5

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