Co-integrated 1.3μm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s

被引：36

作者：

Ferrotti, Thomas ^{[1
,2
,3
]}

Blampey, Benjamin ^{[1
]}

Jany, Christophe ^{[1
]}

Duprez, Helene ^{[1
,3
]}

Chantre, Alain ^{[2
]}

Boeuf, Frederic ^{[2
]}

Seassal, Christian ^{[3
]}

Ben Bakir, Badhise ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA Grenoble, CEA, LETI,MINATEC Campus, F-38054 Grenoble, France

[2] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

[3] Univ Lyon, Ecole Cent Lyon, CNRS, INL,UMR 5270, F-69134 Ecully, France

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 26期

关键词：

PHOTONICS; PERFORMANCE;

D O I：

10.1364/OE.24.030379

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors. (C) 2016 Optical Society of America

引用

页码：30379 / 30401

页数：23

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