Structural and optical properties of n-type porous silicon fabricated in dark

被引：0
|
作者：
Das, M. [1 ]
Sarkar, D. [1 ]
机构：
[1] Gauhati Univ, Dept Phys, Gauhati 781014, India
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2013年 / 51卷 / 10期
关键词：
Porous silicon; Luminescence; Quantum confinement; Raman spectra; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; LUMINESCENCE;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The n-type porous silicon has been fabricated under dark condition. SEM picture shows appreciable porosity with even distribution of pores with pore size ranging from 280 to 570 nm. XRD and FTIR confirm porous silicon (PSi) formation. Photoluminescence gives characteristic yellow orange emission of PSi with peak at 607.5 nm. Raman spectra show red shift of peak at some spots and Raman enhancement of intensity at some other spots along with the characteristic crystalline Si peak.
引用
收藏
页码：724 / 727
页数：4
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