Characteristics of built-in polarization potentials in vertically and laterally arranged InGaN/GaN quantum dots

被引：4

作者：

Park, Seoung-Hwan ^{[1
]}

Hong, Woo-Pyo ^{[1
]}

Kim, Jong-Jae ^{[1
]}

机构：

[1] Catholic Univ Daegu, Dept Elect Engn, Kyeongsan 712702, Kyeongbuk, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

LASERS; GA;

D O I：

10.1063/1.4770301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Built-in polarization potentials for vertically and laterally arranged InGaN/GaN quantum dot (QD) structures are investigated using the finite-element method based on the theory of continuum elasticity. The potential for vertically arranged QD structures is shown to depend significantly on the number of arranged QD. On the other hand, in the case of laterally arranged QD structures, the potential is shown to be nearly independent of the number of arranged QD. In the case of three vertically arranged QDs, the potential in the central QD is greatly reduced. Similar result is observed in structures with more QDs than three. On the other hand, the reduction effect is not observed in the case of two QDs. The electric field in the central QD region for three vertically arranged QDs is nearly constant and is shown to be smaller compared to that in the left or right QD region. We observe that the potential in the central QD increases with increasing spacer layer thickness. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770301]

引用

页数：4

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