Highly reflective AlGaAsSb/InP Bragg reflector at 1.55 μm grown by MOVPE

The metalorganic vapor-phase epitaxy growth of a highly reflective 24-pair AlGaAsSb/InP-distributed Bragg reflector (DBR) is reported for the first time. The influence of the growth parameters such as the V/III input ratio, the growth temperature and the pressure, the total H-2 flow, the gas velocity and the switching sequence of the source gases at the interfaces has been deeply investigated and optimized to achieve stable growth conditions. The DBR achieves a reflectivity as high as 99.5% around 1.55 mu m, a uniform stable composition, and an excellent crystal quality over the 2 inch wafer, with a surface free of crosshatch and a defect density below 1/cm(2). For the optical characterizations, measurements of linear and nonlinear reflectivity, transmission, pump-probe and photoluminescence were done. The interfaces and bulk layers of InP/AlGaAsSb/InP heterostructures were analyzed by transmission electron microscopy. High resolution X-ray diffraction measurements were used to determine the composition shift in the growth plane of the DBR. The measurements show the high quality of the growth and demonstrate that thick AlGaAsSb/InP heterostructures can be grown by metalorganic vapor-phase epitaxy (MOVPE), and in particular DBRs above 1.31 mu m. (c) 2005 Elsevier B.V. All rights reserved.