W-CMP alignment using ASML's ATHENA system on an I-line stepper

被引：3

作者：

Prasad, KJ ^{[1
]}

Rajan, DA ^{[1
]}

Kong, TY ^{[1
]}

Sun, GP ^{[1
]}

Morgan, S ^{[1
]}

Phillips, M ^{[1
]}

Ng, B ^{[1
]}

机构：

[1] Chartered Semiconductor Mfg Ltd, Singapore 738406, Singapore

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XV | 2001年 / 4344卷

关键词：

W-CMP alignment; ATHENA;

D O I：

10.1117/12.436730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates the overlay capability of ASML's ATHENA alignment system on I-line steppers for W-CND processes. The evaluation presents the method used to find the best scribe-line marks, alignment recipe and the long term overlay capability of ATHENA for a 0.35 mum device in a production environment. This alignment capability for W-CMP meets the overlay requirement for the 0.35 mum process and thus leads to device yield improvement.

引用

页码：79 / 88

页数：10

共 3 条

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[2] Effect of processing on the overlay performance of a wafer stepper
Dirksen, P
Juffermans, C
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[J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XI, 1997, 3050 : 102 - 113
[3] NEIJZEN JHM, 1999, P SPIE, V3677

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