Current status of GaN power devices

被引：32

作者：

Kachi, Tetsu ^{[1
,2
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[2] Japan Sci & Technol Agcy JST, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 21期

关键词：

GaN power device; lateral structure; vertical structure; current collapse; normally-off; ALGAN/GAN HEMTS; DEPLETION MODE; ENHANCEMENT;

D O I：

10.1587/elex.10.20132005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of GaN power devices has been rapidly improving. Recently, the main approach is the use of AlGaN/GaN HEMT structures on Si substrates, for which the target breakdown voltage is initially 600 V or less. Although issues still remain with regard to current collapse and the threshold voltage required for normally-off operation, many companies have announced their intention to commercialize such devices. In this report, recent developments concerning GaN power devices are reviewed, and unresolved issues and future expectations are discussed.

引用

页数：12

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