Design High-Efficiency III-V Nanowire/Si Two-Junction Solar Cell

被引:6
|
作者
Wang, Y. [1 ]
Zhang, Y. [1 ]
Zhang, D. [1 ]
He, S. [1 ]
Li, X. [2 ]
机构
[1] Anhui Univ, Coll Elect Engn & Automat, Hefei 230039, Peoples R China
[2] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
Two-junction solar cells; Nanowire; Current matching; Photovoltaics; GAAS NANOWIRES;
D O I
10.1186/s11671-015-0968-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, we report the electrical simulation results of a proposed GaInP nanowire (NW)/Si two-junction solar cell. The NW physical dimensions are determined for optimized solar energy absorption and current matching between each subcell. Two key factors (minority carrier lifetime, surface recombination velocity) affecting power conversion efficiency (PCE) of the solar cell are highlighted, and a practical guideline to design high-efficiency two-junction solar cell is thus provided. Considering the practical surface and bulk defects in GaInP semiconductor, a promising PCE of 27.5 % can be obtained. The results depict the usefulness of integrating NWs to construct high-efficiency multi-junction III-V solar cells.
引用
收藏
页数:5
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