Revisiting the "In-clustering" question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

被引：40

作者：

Baloch, Kamal H. ^{[1
]}

Johnston-Peck, Aaron C. ^{[2
]}

Kisslinger, Kim ^{[2
]}

Stach, Eric A. ^{[2
]}

Gradecak, Silvija ^{[3
]}

机构：

[1] MIT, Elect Res Lab, Cambridge, MA 02139 USA

[2] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期

基金：

美国国家科学基金会;

关键词：

ENERGY-LOSS SPECTROSCOPY; QUANTUM-WELL-STRUCTURE; LIGHT-EMITTING-DIODES; LASER-DIODES; INDIUM; GAN;

D O I：

10.1063/1.4807122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high intensity of light emitted in InxGa1-xN/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in InxGa1-xN quantum wells (QWs). However, there is significant disagreement about the existence of such clusters in as-grown InxGa1-xN QWs. We employ atomically resolved C-S-corrected scanning transmission electron microscopy and electron energy loss spectroscopy at 120 kV-which we demonstrate to be below the knock-on displacement threshold-and show that indium clustering is not present in as-grown In0.22Ga0.78N QWs. This artifact-free, atomically resolved method can be employed for investigating compositional variations in other InxGa1-xN/GaN heterostructures. (C) 2013 AIP Publishing LLC.

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页数：4

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