Review: grain boundary faceting-roughening phenomena

被引：105

作者：

Straumal, B. B. ^{[1
,2
,3
,4
]}

Kogtenkova, O. A. ^{[1
]}

Gornakova, A. S. ^{[1
]}

Sursaeva, V. G. ^{[1
]}

Baretzky, B. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

[2] Karlsruhe Inst Technol, Inst Nanotechnol, D-76344 Eggenstein Leopoldshafen, Germany

[3] State Univ, Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia

[4] Natl Univ Sci & Technol MISIS, Lab Hybrid Nanomat, Moscow 119049, Russia

来源：

JOURNAL OF MATERIALS SCIENCE | 2016年 / 51卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

EQUILIBRIUM CRYSTAL SHAPES; YBA2CU3O7-X BICRYSTAL JUNCTIONS; ASYMMETRIC TILT BOUNDARIES; CONTINUOUS SYMMETRY GROUP; CRITICAL-CURRENT DENSITY; LONG-RANGE ORDER; TEMPERATURE-DEPENDENCE; INCLINATION DEPENDENCE; TRANSPORT-PROPERTIES; CRITICAL CURRENTS;

D O I：

10.1007/s10853-015-9341-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Similar to free surfaces, the grain boundaries (GBs) in metals, semiconductors and insulators can contain flat (faceted) and curved (rough) portions. In the majority of cases, facets are parallel to the most densely packed planes of coincidence sites lattice formed by two lattices of abutting grains. Facets disappear with the increasing temperature (faceting-roughening transition) and the increasing angular distance from coincidence misorientation. The temperature of GB faceting-roughening transition T (R) decreases with the increasing inverse density of coincidence sites I pound. In case of fixed I pound, T (R) decreases with the decreasing density of coincidence sites in the GB plane. The intersection line (ridge) between facets or between facets and curved (rough) portions of surfaces can be of first order (two different tangents in the contact point) or of second order (common tangent, continuous transitions). The rough (curved) portions of GB can also form the first-order rough-to-rough ridges (with two tangents). GB facets control the transition from normal to abnormal grain growth and strongly influence the GB migration, diffusion, wetting, fracture and electrical conductivity.

引用

页码：382 / 404

页数：23

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