On nonstationary regimes in electric circuits with ferroelectric negative capacitance

被引:0
作者
Kostromina, Olga [1 ]
Potapov, Alexander [2 ]
Rakut, Igor [3 ]
Rassadin, Alexander [4 ]
Tronov, Anton [5 ]
机构
[1] Lobachevsky State Univ Nizhny Novgorod, Inst Informat Technol Math & Mech, Nizhnii Novgorod, Russia
[2] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Moscow, Russia
[3] Lobachevsky State Univ Nizhny Novgorod, Sci & Res Radiophys Inst, Nizhnii Novgorod, Russia
[4] Sci & Tech Soc Radio Engn Elect & Commun, Nizhnii Novgorod, Russia
[5] Nizhny Novgorod Math Soc, Nizhnii Novgorod, Russia
来源
2017 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON) PROCEEDINGS | 2017年
关键词
ferroelectric; negative capacitance; the Abel equation; periodical input voltage; Hadamard example;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a number of exact solutions for general model of ferroelectric-dielectric bilayer capacitor with negative capacitance. Our model is based on the Landau-Ginzburg-Devonshire expression for free energy density of ferroelectric. Our solutions are suitable for real circuit design applications. We also discuss the transmission line filled by ferroelectric with negative capacitance.
引用
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页数:3
相关论文
共 7 条
[1]  
Appell V., 1889, J MATH-UK, V5, P361
[2]   Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature [J].
Appleby, Daniel J. R. ;
Ponon, Nikhil K. ;
Kwa, Kelvin S. K. ;
Zou, Bin ;
Petrov, Peter K. ;
Wang, Tianle ;
Alford, Neil M. ;
O'Neill, Anthony .
NANO LETTERS, 2014, 14 (07) :3864-3868
[3]  
Hadamard J., 1902, PRINCETON U B, P49
[4]   Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures [J].
Khan, Asif Islam ;
Bhowmik, Debanjan ;
Yu, Pu ;
Kim, Sung Joo ;
Pan, Xiaoqing ;
Ramesh, Ramamoorthy ;
Salahuddin, Sayeef .
APPLIED PHYSICS LETTERS, 2011, 99 (11)
[5]  
Kostromina O.S., 2016, INTERNATIONAL CONFER, P21
[6]  
Kostromina O.S., 2017, 7 ALL RUSS C YOUNG S, P17
[7]   Use of negative capacitance to provide voltage amplification for low power nanoscale devices [J].
Salahuddin, Sayeef ;
Dattat, Supriyo .
NANO LETTERS, 2008, 8 (02) :405-410