Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes

被引：1

作者：

Davydov, S. Yu. ^{[1
,2
]}

Lebedev, A. A. ^{[1
]}

Lebedev, S. P. ^{[1
]}

Sitnikova, A. A. ^{[1
]}

Sorokin, L. M. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

HETEROPOLYTYPE EPITAXY;

D O I：

10.1134/S1063785016120051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transition region of a 3C-SiC/4H-SiC heterostructure constituted by layers of the 3C and 4H polytypes has been studied. A previously proposed spinodal decomposition model was used to estimate the thickness ratio of 4H and 3C layers in comparison with the image furnished by transmission electron microscopy.

引用

页码：1153 / 1155

页数：3

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