Lattice properties, energy states and optical spectra of MnxGa1-xAs magnetic semiconductors

被引:8
作者
Bouarissa, N. [1 ]
Zerroug, S. [2 ,3 ]
Siddiqui, S. A. [1 ]
Hajry, A. [1 ]
机构
[1] Najran Univ, PCSED, Najran 11001, Saudi Arabia
[2] Univ Bejaia, Dept Troncs Communs, Fac Sci Nat & Vie, Bejaia 6000, Algeria
[3] Univ Setif, Dept Phys, Lab Optoelect & Composants, Setif 19000, Algeria
关键词
Structural properties; Band structure; Optical spectra; Magnetic semiconductors; MnxGa1-xAs; III-V SEMICONDUCTORS; HYDROSTATIC-PRESSURE; GAAS; SPINTRONICS; ALLOYS;
D O I
10.1016/j.spmi.2013.09.033
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present first-principles calculations based on the density functional theory for the electronic structure of the magnetic semiconductor MnxGa1-xAs with an experimentally realistic Mn contents. To calculate the electronic exchange and correlation energies, we use in this study the generalized gradient approximation (GGA) of Perdew-Burke-Ernzerhof and the GGA of Wu-Cohen. In addition, to calculate band structure with high accuracy we used modified Becke-Johnson exchange potential with the GGA approach. We find that the material system of interest possesses a spin-polarized valence band that could support ideal spin-polarized hole transport. We further find that sp-d hybridization plays a key role in the optical properties of MnxGa1-xAs. We therefore believe these results will be useful for spintronics applications. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:237 / 244
页数:8
相关论文
共 34 条
[1]   ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J].
ASPNES, DE ;
OLSON, CG ;
LYNCH, DW .
PHYSICAL REVIEW LETTERS, 1976, 37 (12) :766-769
[2]   Challenges for semiconductor spintronics [J].
Awschalom, David D. ;
Flatte, Michael E. .
NATURE PHYSICS, 2007, 3 (03) :153-159
[3]  
Blaha P., 2001, AUGMENTED PLANE WAVE
[4]   Effects of compositional disorder upon electronic and lattice properties of GaxIn1-xAs [J].
Bouarissa, N .
PHYSICS LETTERS A, 1998, 245 (3-4) :285-291
[5]   The effect of hydrostatic pressure on the electronic and optical properties of InP [J].
Bouarissa, N .
SOLID-STATE ELECTRONICS, 2000, 44 (12) :2193-2198
[6]   Predicted electronic properties of GaAs under hydrostatic pressure [J].
Boucenna, M ;
Bouarissa, N .
MATERIALS CHEMISTRY AND PHYSICS, 2004, 84 (2-3) :375-379
[7]   Ellipsometric study of the electronic structure of Ga1-xMnxAs and low-temperature GaAs -: art. no. 205208 [J].
Burch, KS ;
Stephens, J ;
Kawakami, RK ;
Awschalom, DD ;
Basov, DN .
PHYSICAL REVIEW B, 2004, 70 (20) :205208-1
[8]  
Cohen M. L., 1988, ELECT STRUCTURE OPTI
[9]   OPTICAL-PROPERTIES AND DAMAGE ANALYSIS OF GAAS SINGLE-CRYSTALS PARTLY AMORPHIZED BY ION-IMPLANTATION [J].
ERMAN, M ;
THEETEN, JB ;
CHAMBON, P ;
KELSO, SM ;
ASPNES, DE .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2664-2671
[10]   Tailoring ferromagnetic chalcopyrites [J].
Erwin, SC ;
Zutic, I .
NATURE MATERIALS, 2004, 3 (06) :410-414