Band alignment at the interface of a SnO2/gamma-In2Se3 heterojunction

被引：21
|
作者：
Bernede, JC
Marsillac, S
机构：
[1] Equipe Couches Minces Mat. N., 44322 Nantes Cedex 3
来源：
MATERIALS RESEARCH BULLETIN | 1997年 / 32卷 / 09期
关键词：
electronic materials; multilayers; thin films; photoelectron spectroscopy; electrical properties;
D O I：
10.1016/S0025-5408(97)00090-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The band alignment at the interface of a SnO2/gamma-In2Se3 heterojunction has been studied by XPS. The measurements have been performed on samples obtained under the same experimental conditions as those used to achieve the SnO2/gamma-In2Se3 rectifying contact. The gamma-Ln(2)Se(3) upper layer was 5 nm thick. The semi-direct XPS technique used to measure the band offsets allows us to estimate the conduction band discontinuity Delta Ec to -0.3 +/- 0.3 eV. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：1193 / 1200
页数：8
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