Band alignment at the interface of a SnO2/gamma-In2Se3 heterojunction

被引：21

作者：

Bernede, JC

Marsillac, S

机构：

[1] Equipe Couches Minces Mat. N., 44322 Nantes Cedex 3

来源：

MATERIALS RESEARCH BULLETIN | 1997年 / 32卷 / 09期

关键词：

electronic materials; multilayers; thin films; photoelectron spectroscopy; electrical properties;

D O I：

10.1016/S0025-5408(97)00090-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The band alignment at the interface of a SnO2/gamma-In2Se3 heterojunction has been studied by XPS. The measurements have been performed on samples obtained under the same experimental conditions as those used to achieve the SnO2/gamma-In2Se3 rectifying contact. The gamma-Ln(2)Se(3) upper layer was 5 nm thick. The semi-direct XPS technique used to measure the band offsets allows us to estimate the conduction band discontinuity Delta Ec to -0.3 +/- 0.3 eV. (C) 1997 Elsevier Science Ltd.

引用

收藏

页码：1193 / 1200

页数：8

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