Growth of high-quality AlN at high growth rate by high-temperature MOVPE

被引：39

作者：

Fujimoto, N. ^{[1
]}

Kitano, T. ^{[1
]}

Narita, G. ^{[1
]}

Okada, N. ^{[1
]}

Balakrishnan, K. ^{[1
]}

Iwaya, M. ^{[1
]}

Kamiyama, S. ^{[1
]}

Amano, H. ^{[1
]}

Akasaki, I. ^{[1
]}

Shimono, K. ^{[2
]}

Noro, T. ^{[2
]}

Takagi, T. ^{[2
]}

Bandoh, A. ^{[3
]}

机构：

[1] Meijo Univ, 21st Century COE Program Nano Factory, Fac Sci & Technol, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan

[2] Ibiden Comp Ltd, Ceram Operat, Gifu 5038503, Japan

[3] Showa Denko K K, Corp R&D Ctr, Midori Ku, Chiba 2670056, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565357

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

AlN layers were grown by high-temperature MOVPE. A systematic analysis of high-temperature growth of AlN was carried out and the resultant layers were analyzed by X-ray diffraction and atomic force microscopy. The structural quality and the morphology of AlN layers improve with rising growth temperature. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1617 / 1619

页数：3

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