Direct integration of subwavelength structure on a GaAs solar cell by using colloidal lithography and dry etching process

被引：6

作者：

Kim, Dae-Seon ^{[1
]}

Eo, Sung-Hwa ^{[1
]}

Jang, Jae-Hyung ^{[1
,2
,3
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Informat & Commun, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Res Inst Solar & Sustainable Energies, Kwangju 500712, South Korea

[3] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 03期

关键词：

ANTIREFLECTION COATINGS; BROAD-BAND; EFFICIENCY ENHANCEMENT; GRATING STRUCTURES; FABRICATION; NANOSTRUCTURES; PERFORMANCE; SUBSTRATE; SURFACE; FILMS;

D O I：

10.1116/1.4798410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An antireflective subwavelength structure (SWS) was realized on the InGaP layer of a GaAs solar cell by using colloidal lithography followed by dry etching process. The fabricated SWS with an aspect ratio of 1.33 and a period of 300 nm showed enhanced optical properties and device characteristics. The average reflectance of the SWS surface of the GaAs solar cell was 7.1% in the wavelength range between 300 and 1000 nm. More solar energy was absorbed by the GaAs solar cell due to the lowered surface reflection by the SWS. It is the dominant factor in the 28.2% improvement of the power-conversion efficiency (eta) of the SWS-integrated GaAs solar cell as compared to that of the GaAs solar cells without SWS. (C) 2013 American Vacuum Society.

引用

页数：5

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