Influence of rare earth doping concentrations on the properties of spin coated V2O5 thin films and Cu/Nd-V2O5/n-Si Schottky barrier diodes

被引：46
作者：
Balasubramani, V [1 ]
Chandrasekaran, J. [1 ]
Manikandan, V [2 ]
Marnadu, R. [1 ]
Vivek, P. [1 ]
Balraju, P. [3 ]
机构：
[1] Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Coimbatore 641020, Tamil Nadu, India
[2] Kongunadu Arts & Sci Coll, Coimbatore 641029, Tamil Nadu, India
[3] Coimbatore Inst Technol, Coimbatore 641014, Tamil Nadu, India
来源：
INORGANIC CHEMISTRY COMMUNICATIONS | 2020年 / 119卷
关键词：
V2O5 interfacial thin film; MIS type Schottky barrier diodes (SBDs); Spin coating method; Conduction analysis; ELECTRICAL-PROPERTIES; ANNEALING TEMPERATURE; V CHARACTERISTICS; SI; MIS; NANORODS; IMPACT; PHOTORESPONSE; BEHAVIOR;
D O I：
10.1016/j.inoche.2020.108072
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
In the present work, Nd-(x)-V2O5 -nanorods (x = 2, 4 and 6 wt%) thin films were prepared via a spin coating technique. X-ray diffraction analysis shows tetragonal phases for neodymium substituted films. The concern diffraction angle shifted to higher angle owing to substitution in vanadium that implies complete occupation in V2O5 crystal lattice. FE-SEM images are flaunting one dimensional nano-rod formation. Conductivity analysis of fabricated diode at different temperature reveals their activation energies (E-a) and these energies are high when rare earth interfaced diode in contrast to pure vanadium films. The essential current (I) and voltage (V) characteristics of junction diodes express nonlinear behaviour. The photodiode parameters like n, Phi(B), I-o, P-s, R, QE and D* are calculated by dark and light condition. The photodiode performance under lighting condition is superior than dark.
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页数：7
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