Two-Step Annealing Study of Cuprous Oxide for Photovoltaic Applications

被引：5

作者：

Lloyd, Michael A. ^{[1
]}

Siah, Sin-Cheng ^{[1
]}

Brandt, Riley E. ^{[1
]}

Serdy, James ^{[1
]}

Johnston, Steve W. ^{[2
]}

Hofstetter, Jasmin ^{[1
]}

Lee, Yun Seog ^{[1
]}

McCandless, Brian ^{[3
]}

Buonassisi, Tonio ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

[3] Inst Energy Convers, Newark, DE 19711 USA

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 05期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

Annealing; charge carrier density; charge carrier mobility; copper compounds; photoconductivity; photovoltaic cells; X-ray diffraction; BUFFER LAYER; CU2O;

D O I：

10.1109/JPHOTOV.2015.2455332

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The properties of large grain cuprous oxide (Cu2O) foils are explored after the implementation of a controlled post-growth annealing process. P-type foils with a wide range of carrier density are demonstrated, enabling a promising processing window for wide bandgap solar cell devices. Hall measurements at room temperature show increased majority carrier concentration after nitrogen annealing and a reduction in mobility. The progressive change in resistivity with annealing temperature is shown, with values approaching 100 Omega.cm. Carrier recombination, measured by microwave photoconductance decay, shows a discrete change upon annealing.

引用

页码：1476 / 1481

页数：6

共 13 条

[1] Lifetime analysis of silicon solar cells by microwave reflection [J].